Influence of Acceptor Incomplete Ionization in p<sup>+</sup> Emitter on SiC LTT with n-Type Blocking Base

Influence of acceptor incomplete ionization in p + emitter on characteristics of SiC LTT with n-type blocking base was investigated in this work through TCAD simulation. The incomplete ionization model in the p + emitter was shielded for comparison of the influence of acceptor complete ionization status. The minimum triggering intensity, forward on-state voltage drop, turn-on delay time and anode voltage falling time were simulated and discussed. The simulation results indicated that the acceptor incomplete ionization in p + emitter makes the minimum triggering intensity, forward on-state voltage drop, switch-on delay time and anode voltage falling time increase by about 3.0 times, 1.24 times, 22% and 2.55 times, respectively.