An Equivalent Chip Neighborhood Range Modelling Method for Medium-Voltage SiC MOSFET Power Module Electric Field Analysis

The low computational efficiency and the solution equation limitation of the technology computer-aided designer (TCAD)-based insulation analysis method constrains the fast parameter sweeping electric field calculation and the transient analysis of medium-voltage silicon carbide (SiC) power module, which is vital for insulation evaluation and optimization. This paper proposes an equivalent chip neighborhood range (E-CNR) modelling method that equates the packaging and SiC chip structures with several metals, insulators, and charge densities excitations in regular finite element method software that could represent the semiconductor structure inside the medium-voltage SiC MOSFET chip. The calibrated TCAD based CNR model serves as the baseline for the E-CNR model calibration and optimization The E-CNR model for 10kV half-bridge SiC MOSFET power module is established in ANSYS Maxwell software and the accuracy and efficiency are verified respectively, showing only 5.4% electric field peak error compared with the baseline and other existing models, and it only takes 1 minute to calculate a case compared with over 40 hours in TCAD. In addition, the practicability of the E-CNR model is illustrated by showing how bonding wire distort the electric field concentration inside the power module.