Photoelectronics Based on 0D Materials

The arrangement and main parameters of the photosensory structures and devices based on quantum dots of the elements of the II, IV, and VI groups of the periodic table made by colloidal chemistry methods have been described. The hybrid structural schemes of photoresistive, photodiode, and phototransistor elements with absorbing layers based on the HgTe, HgSe, PbS, and PbSe colloidal quantum dots (CQDs) for operation in various spectral ranges including using 2D materials have been considered.