氮化镓
材料科学
光电子学
发光二极管
宽禁带半导体
蓝宝石
氮化物
晶体管
二极管
异质结
纳米技术
电气工程
光学
电压
激光器
工程类
物理
图层(电子)
作者
D. Runton,Brian Trabert,J.B. Shealy,R. Vetury
出处
期刊:IEEE Microwave Magazine
[Institute of Electrical and Electronics Engineers]
日期:2013-05-01
卷期号:14 (3): 82-93
被引量:84
标识
DOI:10.1109/mmm.2013.2240853
摘要
In the early 1990s, gallium nitride (GaN) was deemed an excellent, next generation, semiconductor material for high power/high frequency transistors based on the material parameters of bandgap, electron mobility, and saturated electron velocity. The lack of bulk GaN source material led to the need for GaN growth on mismatched substrates such as Si, SiC and sapphire, but fundamental material development controlled the pace of maturation of GaN technology for both electronic and optoelectronic applications. The development of GaN for RF electronics was significantly aided by the intense development that occurred in the race to first production of blue and, eventually, white light-emitting diodes (LEDs). Ultimately, advancements in the growth of device-grade aluminum gallium nitride (AlGaN)/GaN heterostructures culminated in the demonstration of record power density RF amplifiers.
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