铁电性
钛酸铋
薄膜
材料科学
电介质
铋
纳米技术
工程物理
光电子学
冶金
物理
出处
期刊:Electrical Engineering Materials
日期:2008-01-01
摘要
Ferroelectric thin films have excellent ferroelectric/dielectric promising application prospect in non-volatile radom acess memory.In this article,the research progress of Bi4Ti3O12 ferroelectric thin films was introduced,some main preparation methods and dopping on the properties of the thin films were summarized in detail at present.The challenge for bismuth titanate ferroelectric thin films was pointed out.
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