柯肯德尔效应
材料科学
图层(电子)
电镀
方向(向量空间)
化学工程
结晶学
冶金
复合材料
化学
几何学
数学
工程类
作者
T. S. Huang,How Tseng,Yu‐Hsiang Hsiao,Chonghu Cheng,Chenkai Lu,Cheng‐Yi Liu
摘要
(111) and (220) preferred-orientation Cu substrates were successfully produced by varying electroplating current-density. While these preferred-orientation Cu substrates reacted with Sn, serious Kirkendall voids formed at the interfaces between Sn and (111) and (220) preferred-orientation Cu substrates. Also, abnormal Cu3Sn growth occurs; the Cu3Sn layer decreased upon aging and vanished after 1000-h aging. With a prolonged 2000-h aging, a Cu3Sn layer re-grew at the Cu6Sn5/Cu interface. The abnormal Cu3Sn growth was found to highly associate with serious Kirkendall formation
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