MBMW-401: a versatile tool for leading-edge EUV and high-NA EUV mask production

The MBMW-401 offers significant improvements in throughput, placement accuracy, pattern-fidelity, and resolution alongside enhanced automation capabilities and reliability. Its placement corrections improve not only local placement but also global placement accuracy by sophisticated writing schemes. Similarly, CDU improvements are achieved through local CDU corrections to ensure stable global CDU, via correction of mask bending (z-height) related effects. MBMW-401 features an adjustable beam size down to 9nm, achieving sub-20nm feature resolution while maintaining high productivity. In addition, the new electron source that delivers up to 3.5µA total beam current with 590k individually programmable beams boosts up productivity for production nodes that do not require sub-20nm features, e.g. the 3nm and 5nm node.