纳米晶
EEPROM
微控制器
非易失性存储器
嵌入式系统
可扩展性
闪存
可靠性(半导体)
计算机科学
闪光灯(摄影)
EPROM
汽车工业
节点(物理)
材料科学
计算机硬件
纳米技术
操作系统
工程类
功率(物理)
艺术
物理
结构工程
量子力学
航空航天工程
视觉艺术
作者
Sung-Taeg Kang,B. Winstead,Jane Yater,M. Suhail,G. Zhang,Cheongmin Hong,H. Gasquet,Dušan Kolář,Juan Shen,Byung-Jun Min,K. Loiko,A. Hardell,E. Lepore,Reid Parks,R. Syzdek,Samuel Williams,W. Malloch,G. Chindalore,Y. Chen,Yan Shao
标识
DOI:10.1109/imw.2012.6213668
摘要
In this paper, we present the first-ever commercially available embedded Microcontrollers built on 90nm-node with silicon nanocrystal memories that has intrinsic capability of exceeding 500K program/erase cycles. We also show that the cycling performance across temperature (-40C to 125C) is very well behaved even while maintaining high performance that meets or exceeds the requirements of consumer, industrial, and automotive markets. In specific EEPROM implementation, such high endurance is capable of delivering in excess of 200M data updates. In addition, we also demonstrate that the nanocrystal flash memory is highly scalable to the next generation nodes and the scaling can be accomplished without degradation of pro-gram/erase speed, endurance and reliability.
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