CMOS芯片
噪声系数
宽带
低噪声放大器
阻抗匹配
电子工程
线性
电气工程
放大器
噪音(视频)
电阻抗
炸薯条
计算机科学
工程类
图像(数学)
人工智能
作者
Rong Zhou,Shubin Liu,Jiye Liu,Yuhua (Jake) Liang,Zhangming Zhu
标识
DOI:10.1109/tmtt.2022.3161279
摘要
A new linearity optimization (LO) technique is proposed to improve the input third-order intercept point (IIP3) of the wideband noise-canceling (NC) low-noise amplifiers (LNAs) without any influence on input impedance matching. Furthermore, this technique can be combined with the ${gm}$ -boost technique and achieve LO with low power consumption. Fabricated in the 65-nm CMOS technology, the proposed wideband LNA occupies a small chip area of 0.0062 mm 2 . This LNA achieves 4–9.4-dBm IIP3, 17-dB voltage gain, and 2.09–3.2-dB noise figure (NF) over the entire frequency range from 100 MHz to 3.5 GHz. Furthermore, the core circuit draws only 6.6 mA from a single 1-V power supply.
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