二硫化钨
化学气相沉积
化学工程
背景(考古学)
材料科学
扩散
钨
盐(化学)
形态学(生物学)
纳米技术
化学
有机化学
复合材料
冶金
热力学
古生物学
工程类
物理
遗传学
生物
作者
Himal Pokhrel,Joseph Anthony Duncan,Bryson Krause,Thang B. Hoang,Shawn Pollard
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2024-06-07
卷期号:42 (4)
被引量:2
摘要
Tungsten disulfide (WS2) is a promising two-dimensional material owing to its remarkable optical, electronic, and electrocatalytic behavior. However, morphology of this material varies significantly with growth conditions. In this work, we use salt-assisted low-pressure chemical vapor deposition (LP-CVD) to grow WS2 crystals of a few layers reaching over 50 μm in size on SiO2/Si substrates. We observe a transition from large, dendritic to triangular growth by systematically varying the amount of the NaCl promotor material as well as the presence of intermediate Wx+ states for low NaCl amounts. The transition from dendritic to triangular growth is discussed in the context of diffusion limited aggregation, with the transformation likely being the result of reduced formation energy, owing to increasing concentrations of transition metal oxyhalides for given precursor quantities. These results help to clarify the role of effects of the NaCl precursor in salt-assisted LP-CVD of WS2 and provide a new means to tune the morphology of this material.
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