A comprehensive model has been developed to study low-pressure, high-density plasma processing reactors. The model couples plasma generation and transport self-consistently to fluid flow and gas energy equations. The model and the simulation software have been used to analyse chlorine plasmas used in metal etching. The effect of the inductive coil frequency on the plasma characteristics has been examined and found to influence plasma uniformity only moderately. Model predictions for a CF 4 plasma have been found to agree well with experimental results.