电气工程
电容器
电源抑制比
低压差调节器
工艺角
备用电源
CMOS芯片
电压
偏压
开关电源
材料科学
电压调节器
电子工程
跌落电压
工程类
作者
Chang-Joon Park,Marvin Onabajo,José Silva-Martínez
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2014-01-31
卷期号:49 (2): 486-501
被引量:187
标识
DOI:10.1109/jssc.2013.2289897
摘要
This paper presents design techniques for a high power supply rejection (PSR) low drop-out (LDO) regulator. A bulky external capacitor is avoided to make the LDO suitable for system-on-chip (SoC) applications while maintaining the capability to reduce high-frequency supply noise. The paths of the power supply noise to the LDO output are analyzed, and a power supply noise cancellation circuit is developed. The PSR performance is improved by using a replica circuit that tracks the main supply noise under process-voltage-temperature variations and all operating conditions. The effectiveness of the PSR enhancement technique is experimentally verified with an LDO that was fabricated in a 0.18 µm CMOS technology with a power supply of 1.8 V. The active core chip area is 0.14 mm², and the entire proposed LDO consumes 80 µA of quiescent current during operation mode and 55 µA of quiescent current in standby mode. It has a drop-out voltage of 200 mV when delivering 50 mA to the load. The measured PSR is better than –56 dB up to 4 MHz when delivering a current of 50 mA. Compared to a conventional uncompensated LDO, the proposed architecture presents a PSR improvement of 34 dB and 25 dB at 1 MHz and 4 MHz, respectively.
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