Recent development and future prospects of power SiC devices

Summary form only given. Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. The SiC diodes and MOSFETs with advanced trench structures succeeded in improving performance by reduction of the internal electric field. In addition, transfer mold type power modules using SiC devices demonstrated high temperature operation and high power density.