电子顺磁共振
辐照
电离辐射
兴奋剂
离子
材料科学
电子
光谱学
放射化学
分析化学(期刊)
化学
核磁共振
物理
核物理学
光电子学
有机化学
量子力学
色谱法
出处
期刊:IntechOpen eBooks
[IntechOpen]
日期:2020-05-08
被引量:2
标识
DOI:10.5772/intechopen.92317
摘要
Effects of ionizing irradiation on defect creation processes have been studied in rare earth (RE)-doped (RE = Sm, Gd, Eu, Ce, Nd) aluminoborosilicate glass with use of the electron paramagnetic resonance (EPR) and optical spectroscopy. As a function of RE ion nature, we observe that doping significantly influences the nature of the defects produced during irradiation and more specifically the relative proportions between hole and electron defect centers. Strong decrease of defect production efficiency under ionizing radiation independence on both the RE doping content and on the relative stability of the RE different oxidation states is also clearly revealed. The results could be explained by dynamical reversible trapping of the electron-hole pairs produced during irradiation on the different RE charge states as well as by RE segregation and pre-existing defects speciation in ABS glass structure.
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