反铁电性
铁电性
相变
材料科学
偶极子
相(物质)
过渡(遗传学)
凝聚态物理
铁学
纳米技术
化学物理
工程物理
光电子学
量子相变
化学
物理
量子临界点
电介质
基因
生物化学
有机化学
作者
Rujian Jiang,Yun‐Long Tang,Suzhen Liu,Mei‐Xiong Zhu,Changji Li,Yanpeng Feng,Feng‐Hui Gong,Jinghui Wang,Xiaodong Lv,Shuang-Jie Chen,Yujia Wang,Yin‐Lian Zhu,Xiuliang Ma
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-09-06
卷期号:24 (37): 11714-11721
被引量:14
标识
DOI:10.1021/acs.nanolett.4c03382
摘要
Antiferroelectric materials have shown great potential in electronic devices benefiting from the reversible phase transition between ferroelectric and antiferroelectric phases. Understanding the dipole arrangements and clear phase transition pathways is crucial for design of antiferroelectric materials-based energy storage and conversion devices. However, the specific phase transition details remain largely unclear and even controversial to date. Here, we have grown a series of PbZrO 3 on SrTiO 3 substrates and elucidated the fine atom structures and phase transition pathways using atomic-resolution transmission electron microscopy. Specifically, a roadmap for ferroelectric to antiferroelectric phase transitions, here with increasing film thickness, is determined as ferroelectric rhombohedral ( R 3 c )–ferroelectric monoclinic ( Pc )–ferrielectric orthorhombic ( Ima 2)–antiferroelectric orthorhombic ( Pbam ), where Pc and Ima 2 phases act as structural bridges. Moreover, the phase transition pathway is strongly related to the synergistic effect of oxygen octahedral tilting and cation displacement. These findings provide an insightful understanding for the theories and related properties of antiferroelectrics.
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