Theoretical Understanding of the In-plane Tensile Strain Effects on Enhancing the Ferroelectric Performance of Hf0.5Zr0.5O2 and ZrO2 Thin Films

The strain effects on the phase fractions and polarization in Hf 0.5 Zr 0.5 O 2 and ZrO 2 were investigated. Under tensile strain at low temperatures, the ferroelectric phase was stabilized, while the formation of other phases was kinetically inhibited.