镓
数码产品
纳米技术
氧化镓
氧化物
半导体
材料科学
闪存
闪光灯(摄影)
宽禁带半导体
工程物理
计算机科学
工程类
光电子学
电气工程
物理
嵌入式系统
冶金
光学
作者
F. Zika,M. Albagul,Weijun Zhang,S. A. Chodavarapu,Roberto Quaglia,Abdulgani Albagul
出处
期刊:WSEAS Transactions on Electronics
[World Scientific and Engineering Academy and Society (WSEAS)]
日期:2024-12-06
卷期号:15: 118-127
被引量:2
标识
DOI:10.37394/232017.2024.15.14
摘要
Gallium oxide (Ga₂ O₃ ), a semiconductor, has recently attracted the attention of many researchers and specialists due to its large band gap and thermal stability, which has made it widely used in several fields, including modern electronics and optoelectronics. In this paper, the many forms and properties of gallium oxide materials will be highlighted, as well as a complete analysis of their distinctive properties. The synthesis and fabrication procedures will also be discussed, which may shed light on the problems and progress made in this field. Some of the most common applications of gallium oxide will also be explored, including flash memory devices and gas sensors, in addition to its future use in data storage and environmental monitoring technology. In addition, an overview of the commercial prospects will be provided, with expectations indicating significant growth in the market, with an estimated increase of 44% by 2033, which will contribute significantly to the semiconductor industry.
科研通智能强力驱动
Strongly Powered by AbleSci AI