| 标题 |
Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 gate dielectric and partial barrier recess |
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| DOI | |
| 其它 |
期刊:Semiconductor Science and Technology 作者:Xinghuan Li; Zijing Xie; Xiaoyi Liu; Xiao Ma; Hong Wang 出版日期:2026-07-01 |
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(2025-6-4)