| 标题 |
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Electron Device Letters 作者:Pengfei Dong; Jincheng Zhang; Qinglong Yan; Zhihong Liu; Peijun Ma; et al 出版日期:2022-03-16 |
| 求助人 | |
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(2025-6-4)