| 标题 |
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors |
| 网址 | |
| DOI |
10.7567/ssdm.2023.f-7-02
doi
|
| 其它 |
期刊:Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials 作者:C. Durfee; Ivo Otto; Subhadeep Kal; S. Pancharatnam; Matthew Flaugh; et al 出版日期:2023-09-08 |
| 求助人 | |
| 下载 | 暂无链接,等待应助者上传 |
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(2025-6-4)