| 标题 |
Kilovolt-class β-Ga2O3 field-plated Schottky barrier diodes with MOCVD-grown intentionally 1015 cm−3 doped drift layers |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Carl Peterson; Chinmoy Nath Saha; Rachel Kahler; Yizheng Liu; Akhila Mattapalli; et al 出版日期:2025-11-14 |
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(2025-6-4)