| 标题 |
Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD |
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| DOI | |
| 其它 |
期刊:Journal of Crystal Growth 作者:M. Myronov; Xue-Chao Liu; A. Dobbie; D.R. Leadley 出版日期:2010-10-27 |
| 求助人 | |
| 下载 |
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(2025-6-4)