微电子
材料科学
纳米技术
集成电路
制作
蚀刻(微加工)
干法蚀刻
半导体
半导体器件制造
钝化
过程开发
半导体器件
产量(工程)
工程物理
光电子学
工艺工程
薄脆饼
复合材料
图层(电子)
工程类
病理
医学
替代医学
作者
Galit Levitin,Dennis W. Hess
标识
DOI:10.1146/annurev-chembioeng-061010-114249
摘要
Current integrated circuit (IC) manufacturing consists of more than 800 process steps, nearly all of which involve reactions at surfaces that significantly impact device yield and performance. From initial surface preparation through film deposition, patterning, etching, residue removal, and metallization, an understanding of surface reactions and interactions is critical to the successful continuous scaling, yield, and reliability of electronic devices. In this review, some of the most important surface reactions that drive the development of microelectronic device fabrication are described. The reactions discussed do not constitute comprehensive coverage of this topic in IC manufacture but have been selected to demonstrate the importance of surface/interface reactions and interactions in the development of new materials, processing sequences, and process integration challenges. Specifically, the review focuses on surface reactions related to surface cleaning/preparation, semiconductor film growth, dielectric film growth, metallization, and etching (dry and wet).
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