30nm Channel-Length Enhancement-Mode GaN MOSHEMT Transistors on a 300mm GaN-on-TRSOI Engineered Substrate

In this work, we demonstrate industry's first high-performance scaled E-mode GaN MOSHEMT transistors fabricated on a 300mm GaN-on-TRSOI engineered substrate. We further advance and improve upon Intel 300mm GaN technology by employing a low-loss, high resistivity engineered substrate that utilizes a “trap-rich” silicon-on-insulator (TRSOI). We demonstrate for the first time, scaled 30nm channel-length GaN MOSHEMT transistors fabricated on a 300mm GaN-on-TRSOI engineered substrate, and show that superior performance due to the scaling of GaN MOSHEMT can be replicated on such a novel engineered substrate. Various GaN MOSHEMT device architectures with and without gate/source-field plates, and multiple stacked gates are implemented and integrated on the 300mm GaN-on-TRSOI wafer. Advanced engineered substrates can achieve better performance in applications such as RF and power electronics by reducing signal loss and achieving better signal linearity, and enabling advanced integration schemes that may be realized through backside substrate processing.