Effect of recombination time on efficiency and frequency of operation in GaAs TRAPATT devices
重组
光电子学
材料科学
电气工程
环境科学
电子工程
工程类
生物
遗传学
基因
作者
P. Bauhahn,G.I. Haddad
出处
期刊：Electronics Letters [Institution of Engineering and Technology] 日期：1973-09-20卷期号：9 (19): 455-455被引量：2
标识
DOI：10.1049/el:19730331
摘要
The effect of carrier-recombination lifetimes on the performance of GaAs TRAPATT devices has been determined by a numerical simulation, and the results are presented.
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