A Novel Multilevel Nonvolatile Solar‐Blind Deep Ultraviolet Photoelectric Memory Based on an Organic Field Effect Transistor

Abstract Deep ultraviolet (DUV) light monitoring has a wide range of applications in areas such as military surveillance, biological/medical analysis, and flame detection. In this paper, a novel nonvolatile solar‐blind DUV photoelectric memory is investigated based on an organic field effect transistor (OFET). It has 16 different optical memory states of multilevel memory behavior and rewriting capability. The memory window of the device reaches to 23.8 V under a gate voltage of −40 V and 254 nm (DUV) illumination (1.252 mW cm –2 ). Moreover, the device has a retention time of over 10 4 s, more than 100 cycles of writing/reading/erasing/reading (W/R/E/R), and an I ON / I OFF ratio of about 10 2 . The memory behavior can be modulated via the gate voltage, light intensity, and exposure time. In addition, determination of the exposure dose to DUV light is achieved. The memory shows a highly selectivity, which is sensitive to 254 nm DUV. Furthermore, a DUV memory array is fabricated, and the image processing and storage capabilities are verified. This novel device shows a promising path toward highly (wavelength) selective and advanced multilevel solar‐blind DUV monitors.