光电子学
光电二极管
材料科学
原子层沉积
暗电流
化学气相沉积
沉积(地质)
钝化
感应耦合等离子体
雪崩光电二极管
图层(电子)
光学
纳米技术
光电探测器
等离子体
生物
古生物学
物理
探测器
量子力学
沉积物
作者
Luhong Wan,Gaoqi Cao,Xin Shao,Siqi Deng,Jifeng Cheng,Gu Yuan,Xue Li
摘要
To develop extended InGaAs photodiode focal plane arrays with large scale and small pixels, a surface passivation film with low stress is necessary. To study the surface bowing of SiNx passivation film deposited with different conditions by inductively coupled plasma chemical vapor deposition, 2-in. InP samples were first utilized to obtain statistical results. As can be seen from the result, the bowing introduced by the passivation film is reduced to less than 10 μm when applying optimized film deposition conditions, which is a significant optimization. In the further investigation of the passivation effect on the InGaAs photodiode, Al2O3/SiNx stacks were proposed as the passivation layer, and Al2O3 was deposited by atomic layer deposition (ALD). Results demonstrate that the photodiodes passivated by the Al2O3/SiNx stacks have lower dark current density, especially at lower temperatures. At 180 K, the contribution of perimeter dark current is reduced by more than one order of magnitude. Theoretical analysis shows that the composite passivation film effectively suppresses tunneling current at 180 K.
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