Low-temperature fabrication of Pr-doped In2O3 electrospun nanofibers for flexible field-effect transistors

High-quality Pr-doped In 2 O 3 (InPrO) nanofibers were fabricated by a combustion synthesis at a relatively low temperature (380 °C) and the InPrO based FET with high bending stability was successfully fabricated on the PI substrate.