Study on Cu CMP Slurry

The technique of chemical mechanical planarization by new slurry was introduced. We discussed the chemical reaction and the complex mechanism caused by the slurry which used colloidal silica (SiO 2) for abrasive particles and organic alkali for medium (complex agent) in Cu CMP process. The composition of the slurry and the experimental results were presented in this paper. It was shown that using the slurry to polish copper layer with barrier and dielectric layer, faster removal rate of copper and higher selectivity between Cu/Ta/SiO 2 have been gained. So the expected results of Cu CMP process was given.