High Performance Termination Design and Fabrication for SiC MOSFET Device

In this paper, a high performance termination is designed and fabricated in a SiC MOSFET. The P-Rings are formed in the junction termination extension (JTE) region. By forming P-Rings in the junction termination extension (JTE) region, a termination structure called RA-JTE with high performance can be obtained. Some parameters of the termination are simulated, and the optimal structure is decided by analyzing the simulation result. In this study, the RA-JTE structure is applied to SiC MOSFETs for the first time, and the transition region between the main junction and the JTE region is optimized by expanding the P-Well region of the last cell. Devices with the proposed termination structure have been successfully fabricated and then the HTRB reliability test is carried out. The experimental results show that the SiC MOSFET with RA-JTE termination structure has excellent reliability.