Edge passivation: Considerable improvement in photovoltaic performance of perovskite/silicon tandem solar cells

Edge recombination is considered hard to avoid entirely in silicon (Si) solar cells as well as Si-base solar devices, hindering their future commercialization. However, such an important issue in perovskite/silicon (PK/Si) tandem solar cells has not attracted much attention. Herein, a low-temperature, non-vacuum liquid-based edge passivation strategy (LEPS) to improve the power conversion efficiency (PCE) of PK/Si tandem solar cells is proposed. The minority carrier lifetime (τeff) of the PK/Si tandem sample with 495.8 μs significantly enhances to 739.7 μs after passivating the Si sub-cell edge recombination. The open circuit voltage (VOC) of the PK/Si tandem solar cell increases by up to +3.8%abs from the initial state after LEPS treatment due to edge passivation, leading to the PCE of the PK/Si tandem solar cell increases by up to +1.2%abs. Finally, a monolithic PK/Si tandem cell with a PCE of 29.48% was achieved by further utilizing the LEPS, which opened up a simple and effective avenue for enhancing the PCE of PK/Si tandem solar cells and further promoting a higher photovoltaic output power of tandem modules.