光电二极管
等效电路
电容
光电子学
拉普拉斯变换
扩散电容
材料科学
电压
电子工程
电气工程
物理
工程类
数学
电极
量子力学
数学分析
作者
Xuejiao Zhan,Qiaoli Liu,Yitong Wang,Huijun Tian,Anqi Hu,Xiaoying He
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2019-10-01
卷期号:40 (10): 1654-1657
被引量:6
标识
DOI:10.1109/led.2019.2937677
摘要
A coupled equivalent circuit for high-speed Si photodiodes is proposed, which is composed of a traditional resistance-capacitance-limited equivalent circuit and a carrier transit-limited equivalent circuit connected by a voltage controlled current source. All the resistances and capacitances in the carrier transit-limited equivalent circuit have physical meaning according to Laplace Transform. The proposed coupled equivalent circuit was applied to the Si p-i-n photodiodes and agreed well with the measured reflection coefficients and frequency response curves. Again, the minority carrier lifetime, diffusivity and interface state is verified to be the main limiting factors to the frequency response. This improved modeling can provide an effective way to design high speed photodiodes.
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