Study of Influence of HTGB and HTRB Tests on Parameters of 1200V SiC MOSFETs

In recent years, SiC MOSFETs have been replacing Si IGBTs in large numbers in the 1200V power device market, and the application prospects are very promising. However, the reliability problem of SiC MOSFETs has become more serious. In many new applications, SiC MOSFET devices need to work in harsh environmental conditions, and therefore need to be tested for reliability. In order to study the reliability of the devices under electrical and thermal stresses for a long time, the 1200V SiC MOSFETs were tested for High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB), and the trends of their parameters with time were analyzed.