Amorphous InGaZnO 4 Neuron Transistors with Temporal and Spatial Summation Function

Amorphous InGaZnO4 neuron transistors based on multi-gate electric-double-layer modulation are fabricated by photolithography processes. The sweeping rate dependent output current and hysteresis loop are observed due to the proton dynamic process in the SiO2 nanogranular electrolyte. Temporal summation such as paired-pulse facilitation is mimicked in the neuron transistor with one presynaptic input. At the same time, supralinear spatial summation of two presynaptic inputs is also successfully mimicked in the neuron transistor with two presynaptic inputs. Our InGaZnO4 neuron transistors with temporal and spatial summation function are interesting for the brain-inspired neuromorphic system.