Low-temperature (<300 °C) crystalline Al2O3 thin film deposition by resistive thermal evaporation

Crystalline aluminum oxide thin films with high-k dielectric constant are deposited at low temperatures (<300 °C) over soda-lime glass and silicon substrates by a slow resistive thermal evaporation process. Material and electrical characterization of these aluminum oxide thin films were performed. A postdeposition oxidation annealing at 300 °C in O2-rich ambient shows exceptionally low leakage current characteristics. Al2O3 films deposited on soda-lime glass substrates vary from optically translucent to milky white with respect to thickness and exhibit crystalline morphology as confirmed by grazing incidence x-ray diffraction.