单重态
磷光
有机发光二极管
三重态
共发射极
放松(心理学)
荧光
单重态裂变
材料科学
产量(工程)
人口
瞬态(计算机编程)
光电子学
分子物理学
光化学
原子物理学
化学
光学
物理
纳米技术
激发态
计算机科学
社会心理学
人口学
冶金
社会学
图层(电子)
操作系统
心理学
标识
DOI:10.48550/arxiv.1603.08998
摘要
Thermally activated delayed fluorescence has been reported in a number of OLED emitter materials engineered to have low singlet-triplet energy gaps. Here we derive closed solutions for steady state and transient behaviors, and apply these results to obtain the singlet and triplet relaxation, forward and reverse crossing rates and the gap energy and reverse crossing prefactor from delayed and prompt relaxation rates measured over a series of temperatures. The primary rates are then used to calculate the fluorescent/phosphorescent ratio and the singlet/triplet population ratio. The method avoids the need for gated yield measurements. Good fits are obtained using previously published data for 4CzIPN and m-MTDATA:t-Bu-PBD and the results appear to be consistent with reported quantities were available, and with reported behaviors of OLEDS that use these materials.
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