Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

The tunability of the optical gain characteristics of the AlN/GaN/InAlN quantum well heterostructure under uniaxial and biaxial pressures is reported. To study the tunability, pressures on the designed heterostructure are applied in the range of 1–4 GPa along different orientations, i.e., (001), (100), and (110). Under these pressures, the gain characteristics are computed. To perform the calculations for the gain characteristics, the well‐known k⋅p method is adopted. The optical gain is computed under uniaxial and biaxial pressures and the results are analyzed thoroughly. Quantitatively speaking, the amount of pressure (1–4 GPa) along z ‐direction (i.e., 001) is suitable to make significant enhancement in the peak gain (i.e., from ≈7000 to ≈8000 cm −1 ) with the variation in transition wavelength from ≈1347 to ≈1512 nm. While the (100) and (110) oriented pressures having the range 1–4 GPa reduce the peak gain from ≈7100 to ≈5800 cm −1 , and from ≈3550 to ≈3410 cm −1 , respectively. On comparison of the results, it is concluded that only z ‐direction pressure is useful for enhancing the gain characteristics with fine tuning of the transition wavelengths. Consequently, the designed heterostructure can be tuned with enhanced peak gain having red shift wavelength.