Preparation of (111)c-oriented Cu2Se films by pulsed laser deposition method

Abstract In this study, the low-temperature phase α-Cu2Se target with nearly ideal chemical stoichiometric ratio was synthesized through solid reaction process. After that, a series of pure and oriented α-Cu2Se films on single crystal Si (111) was prepared using pulsed laser deposition method, by carefully choosing the appropriate experimental parameters. Despite the increase of deposition time, the chemical composition, the crystal microstructure and the orientation of α-Cu2Se films keep the same. X-ray diffraction (XRD) and energy dispersive X-ray spectrometer show that all the α-Cu2Se films have the uniformity of chemical composition, without any other impurities. Scanning electron spectroscopy and high resolution transmission electron microscopy reveal that α-Cu2Se are stacked nanosheets with exposed crystal planes (111)c. Particularly, the (111)c planes are parallel to Si substrate surface proved by the results of XRD φ-scan and pole figure. This report is a further step to realize the adjustment of anisotropy of Cu2Se properties.