Research on TDDB of thin gate oxide

With the development of very large scale integrated(VLSI ),the quality of thin gate oxide plays a more important role in the reliability of devices and circuits.TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.In this paper,sev-eral main breakdown models of TDDB are introduced.Then SBD(soft breakdown)and HBD(hard breakdown)are compared.Finally the relationship between TDDB and field,temperature and gate oxide thickness are illuminated.