Spin relaxation of conduction electrons in bulk III-V semiconductors

Spin relaxation time of conduction electrons through the Elliot-Yafet,\nD'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for\nbulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance\nof each spin relaxation mechanism is compared and the diagrams showing the\ndominant mechanism are constructed as a function of temperature and impurity\nconcentrations. Our approach is based upon theoretical calculation of the\nmomentum relaxation rate and allows understanding of the interplay between\nvarious factors affecting the spin relaxation over a broad range of temperature\nand impurity concentration.\n