莫特绝缘子
反铁磁性
莫特跃迁
金属-绝缘体过渡
凝聚态物理
兴奋剂
钒
过渡金属
顺磁性
稀土
半导体
材料科学
金属
物理
化学
量子力学
超导电性
赫巴德模型
冶金
生物化学
催化作用
作者
A. L. Pergament,Г. Б. Стефанович,N. P. Markova
标识
DOI:10.48550/arxiv.1411.4372
摘要
September 30, 2015 marks the 110th anniversary of the birth of the famous English physicist N. F. Mott. This article is dedicated to his memory. Here we consider the problem of metal-insulator transition. It is shown that the Mott criterion $a_{B}(n_{c})^{1/3} \approx 0.25$ is applicable not only to heavily doped semiconductors, but also to many other materials and systems, including strongly correlated transition-metal and rare-earth-metal compounds, such as vanadium oxides. A special emphasis is placed to the 'paramagnetic metal - antiferromagnetic insulator' transition in $V_{2}O_{3}$ doped with chromium. In Supplement we also briefly consider the history and state of the art of the Mott transition problem.
科研通智能强力驱动
Strongly Powered by AbleSci AI