与非门
计算机科学
闪光灯(摄影)
压力(语言学)
嵌入式系统
逻辑门
算法
语言学
哲学
艺术
视觉艺术
作者
Myoungjun Chun,Jaeyong Lee,Inhyuk Choi,Jisung Park,Myungsuk Kim,Jihong Kim
标识
DOI:10.1109/lca.2024.3516205
摘要
Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory, we observe that reading a page incurs heterogeneous reliability impacts on each WL, which makes the existing block-level read reclaim extremely inefficient. We propose a new WL-level read-reclaim technique, called Straw, which keeps track of the accumulated read-disturbance effect on each WL and reclaims only heavily-disturbed WLs. By avoiding unnecessary read-reclaim operations, Straw reduces read-reclaim-induced page writes by 83.6% with negligible storage overhead.
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