Ultralow Lattice Thermal Conductivity and High ZT of n-Type Polycrystalline SnSe Realized by Liquid Phase Sintering

SnSe has drawn increasing attention in thermoelectric applications because of its exceptional n/p-type characteristics. Although recent studies have reported an excellent figure of merit ( ZT ) value in p-type polycrystalline SnSe, achieving a breakthrough in thermoelectric performance for its n-type counterpart SnSe remains a critical challenge. The presence of V Sn imposes a critical constraint on the synergistic optimization of carrier transport and phonon scattering in n-type SnSe. In this study, liquid phase sintering introduces high-density dislocations into n-type SnSe polycrystals, effectively scattering mid-frequency phonons. Huge lattice strain fluctuations caused by the defects enable an ultralow lattice thermal conductivity (0.21 W m −1 K −1 ) at 793 K. In addition, part of the liquid phase Sn tends to penetrate into the matrix, which leads to a higher carrier concentration and considerable enhancement in electrical properties. Consequently, a superior ZT (~1.9, 793 K) and an outstanding average ZT ( ZT ave ) (~0.72, 300 to 873 K) are achieved in polycrystalline SnSe, which rank at the top level reported for SnSe-based n-type thermoelectric materials, exceeding those of most n-type thermoelectric systems for mid-temperature applications.