A Novel Strategy to Construct Metal–Organic Frameworks‐Based Memristor with Enhanced Proton Conduction

The limited conductivity of metal‐organic frameworks (MOFs) poses a significant challenge to their application in the domain of memristors. The proton conduction capabilities of MOFs can be improved through the incorporation of guest molecules. Herein, hydrogen protons are introduced into MIL‐53 (Al) via acid leaching, which not only enhances the proton conductivity of MIL‐53 (Al) but also contributes to its superior resistance switching behavior. The results indicate that untreated MIL‐53 (Al) exhibits negligible resistance switching behavior; however, following hydrochloric acid leaching, it demonstrates excellent retention (10 3 cycles), longtime durability (10 3 s), and a favorable ON/OFF ratio (≈25) under bias conditions. Furthermore, under suitable pulse stimulation, the MIL‐53 (Al)‐based memristor successfully emulates biological synaptic behaviors, including excitatory postsynaptic current and paired pulse facilitation. This research presents a novel approach for enhancing the resistive switching performance of MOF‐based memristors.