The role of SiO2 buffer layer in the molecular beam epitaxy growth of CsPbBr3 perovskite on Si(111)

Here we present the growth of molecular beam epitaxy (MBE) CsPbBr 3 perovskite films in the orthorhombic crystal structure, with unique structural and morphological properties. CsPbBr 3 MBE perovskite films, with thickness ranging from a few nm to 300 nm, were grown in ultra-high vacuum on a Si(111)7 × 7 reconstructed surface, and after the formation of about 2 nm of SiO 2 , obtained exposing the clean reconstructed Si surface to molecular oxygen that serves to decouple the film from substrate. X-ray diffraction, and electron microscopies, such as scanning electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements showed remarkable structural, as well as morphological features, indicating extremely high crystallinity over a large area and across the bulk of the perovskite film. Through the X-ray diffraction patterns we found very narrow (002) and (110) reflections of CsPbBr 3 in pure orthorhombic phase, exhibiting a full width at half maximum of only 0.035°, value similar to a bulk Si single crystals, and a surface morphology composed of flat areas up to micrometres in lateral size. Our results shed new light both on preparation of high crystal quality perovskite films, and on the intrinsic properties of this striking fully-inorganic materials, which are exploitable for potential applications in electronic/optoelectronic devices and next generation photovoltaic solar cells.