Rapid Characterization of GaN-on-diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance

Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.