Effect of the polarity of InSb(111),(211) and (110) planes on etching

InSb is a typical AⅢBⅤ semiconducting compound which contains a polar axis.In this paper,effect of the polarity of InSb on etching has been studied.The cause of the effect on etching has been analyzed.Experiment results indicate different etching rates for(111) and(211) planes with CP4 etchant.The etch rate for(111)A planes is 2.2 μm/s and 3.6 μm/s for(111)B planes.The etch rate for(211)A planes is 3 μm/s and 4.8 μm/s for(211)B planes.However,effect of the polarity on etching has not been shown for(110) planes.The etch rate of the(110) planes is 4 μm/s.