Investigating the optoelectronic device performance of p-Si/WO 3 /Ag sandwich structure

The electrical and photoelectrical properties of a p-Si/WO 3 /Ag sandwich structure fabricated utilizing radio frequency (RF) sputtering of WO 3 thin films were investigated. A comprehensive analysis of the surface morphology, structural, and optical characteristics of the WO 3 thin films was performed. The findings demonstrated that the RF-sputtered WO 3 thin films with smooth and uniform surface morphology are well-applicable in large-area applications. The WO 3 thin films exhibited well-crystallized structures with a 2.92 eV optical band gap, indicating their suitability for optoelectronic applications. Current-voltage and current-time measurements in the dark and under various illumination conditions were used to evaluate the optoelectronic performance of the p-Si/WO 3 /Ag sandwich structure. The electrical and optoelectronic parameters, including ideality factor, barrier height, series resistance, and photosensitive were calculated. The results showed that the p-Si/WO 3 /Ag sandwich-type device obtained using RF sputtered WO 3 thin film demonstrates remarkable rectification properties, highlighting its potential for use in photodiodes and optoelectronic devices.