Single-crystalline SiC integrated onto Si-based substrates via plasma-activated direct bonding

We propose a plasma-activated direct bonding process at low temperatures (≤200 °C) to form heterostructures between single-crystalline SiC and conventional Si-based substrates (SiO2, Si, and glass) without any interlayers. Surface activation was performed via an inductively coupled O2 plasma for 60 s with a lower bombardment damage position. The SiC surfaces were much more hydrophilic after activation, and the generation of defect states was suppressed. Consequently, void-free and robust bonding interfaces of SiC/SiO2, SiC/Si and SiC/glass were successfully achieved. There were no carbon-enriched layers across the bonding interfaces, which could improve the electrical properties of SiC-based devices. Additionally, the bonding interface of SiC/glass exhibited excellent optical transparency, and interfacial corrosion resistance was confirmed via immersion tests in biological solutions. This bonding method provides a feasible route towards industry-compatible heterogeneous integration of single-crystalline bulk SiC onto Si-based platforms for electronic, optical, mechanical, and biomedical applications.