干法蚀刻
X射线光电子能谱
反应离子刻蚀
蚀刻(微加工)
微电子
材料科学
高电子迁移率晶体管
各向同性腐蚀
湿法清洗
化学工程
纳米技术
磷酸
分析化学(期刊)
化学
冶金
图层(电子)
晶体管
有机化学
工程类
色谱法
物理
电压
量子力学
作者
Sabria Benrabah,Maxime Legallais,P. Besson,Simon Ruel,Laura Vauche,B. Pelissier,Chloé Thieuleux,B. Salem,Matthew Charles
标识
DOI:10.1016/j.apsusc.2021.152309
摘要
The impact of several wet etchants commonly encountered in the microelectronic industry on the surface chemistry of GaN on silicon was explored. In order to get closer to fully recessed gate HEMT fabrication processes, we investigated different kinds of GaN surfaces. This study was conducted on as-grown GaN and dry etched GaN, with etching consisting of inductive coupled plasma reactive ion etching (ICP-RIE), followed by atomic layer etching (ALE) and O2 plasma stripping. The impact of each wet treatment was evaluated by parallel Angle Resolved X-ray Photoelectron Spectroscopy (pAR-XPS). Treatment with phosphoric acid (H3PO4) showed a significant modification of the surface and further studies were performed using this treatment. The impact of H3PO4 on GaN surface chemistry and morphology was assessed by pAR-XPS and atomic force microscopy (AFM) respectively. A delayed effect was observed for dry etched samples compared to as-grown samples, with a successful recovery of the surface after 60 min of treatment. We also proposed a mechanism explaining the progressive formation on steps on the surface over time. Further research was performed on dry etched samples without ALE which also modified the delay time of the H3PO4 treatment, but still enabled a recovery of the surface morphology. In contrast to other studies, we showed that, with the appropriate choice of parameters for the H3PO4 treatment, it was possible to successfully recover the GaN surface after dry etching without significantly opening dislocation holes. This is therefore a promising treatment to be used during GaN HEMT processing to recover good quality surfaces after etching.
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